主要特點(diǎn)及優(yōu)點(diǎn)最具成本效益的自動(dòng)參數(shù)測(cè)試系統(tǒng)在高度靈活性和快速測(cè)試開發(fā)十分重要的地方，在廣泛的產(chǎn)品平臺(tái)上進(jìn)行了最優(yōu)化三種系統(tǒng)配置可選擇 基礎(chǔ)配置用于常規(guī)工藝監(jiān)測(cè)目的 低電流配置用在壓微米硅MOS技術(shù) 高電壓配置用于汽車電子和電源管理器件與流行的汽車探針組件兼容操作可引出線纜的測(cè)試配置最大化了探針接口的靈活性和外部電壓范圍 與吉時(shí)利9139A型探針卡兼容 支持對(duì)已有的5英寸探針卡庫進(jìn)行重用該經(jīng)過證明的儀器技術(shù)在實(shí)驗(yàn)室和工廠環(huán)境都能提供高精度和可重復(fù)的測(cè)量吉時(shí)利新的S530參數(shù)測(cè)試系統(tǒng)構(gòu)建于我們久經(jīng)考驗(yàn)的資源和測(cè)量技術(shù)，并針對(duì)工藝控制監(jiān)測(cè)、工藝可靠性檢測(cè)和器件描述等應(yīng)用需要的DC和C-V測(cè)量進(jìn)行設(shè)計(jì)。吉時(shí)利公司為全球半導(dǎo)體產(chǎn)業(yè)客戶提供廣泛的標(biāo)準(zhǔn)和客戶定制參數(shù)測(cè)試系統(tǒng)，已經(jīng)有超過30年的經(jīng)驗(yàn)軟件處理能力：探針臺(tái)全自動(dòng)控制 2. 實(shí)時(shí)IV/CV曲線 3. 自定義設(shè)置參數(shù)界面，提供腳本語言編輯器，方便定義數(shù)據(jù)報(bào)表格式 主要測(cè)量項(xiàng)目列表：BVDSS(DrainSourcevoltagebreakdown,gatesourceshorted)BVDSV(DrainSourcevoltagebreakdown,gatebiased)BVGDO(GateDrainvoltagebreakdown,sourceopened)BVGDS(GateDrainvoltagebreakdown,sourcedrainshorted)BVGSO(Gatesourcevoltagebreakdown,drainopened)IDL(Drainleakagecurrent,gatesourceshorted)IDS(singlepointDraincurrent)IDVD(ID-VDcurve)IDVG(ID-VGcurve)IDVG@VSUB(ID-VGcurvewithstepsubstratevoltage)IGL(Singlepointgateleakagecurrent)IGVG(IG-VGcurve)ISD(singlepointsourcecurrent)ISL(sourceleakage)ISUBVG(Isub-Vgcurve)SO(Subthresholdvoltageswing)VTH_CI(ConstantcurrentVth)VTH_EX(MaxGMVth)VTH_LLSQ(LinearextrapolatedVth)VTH_SEL(SelfbiasingVth)BVCBO(collector-basebreakdownvoltagewithemitteropen)BVCEI(collector-emitterbreakdownvoltagewithbiasI)BVCEO(collector-emitter(baseopen) breakdownvoltage)BVCES(collector-emitter(base-emittershorted) breakdownvoltage)BVCEV(collector-emitter(basebias) breakdownvoltage)BVEBO(emitter-base(collector-open)breakdownvoltage)BVECO(emitter-collector breakdownvoltageatopeningbase)HFE_SW(DCcurrentgainsweepmethod)HFE_TRA1(DCcurrentgain,traditionalmethod)IBCO(base-collectorcurrent,collectoropened)IBEO(base-collectorcurrent,emitteropened)IBICVBE(IBandICvsVBEcurves)IBVBE(IBvsVBEcurve)ICBO(collector-emittercutoffcurrent,baseopened)ICEO(collector-emittercutoffcurrent,baseopened)ICES(collector-emittercutoffcurrent,base-emittershorted)ICEV(collector-emittercutoffcurrent,basebiased)ICVCB(IC-VCBcurve)ICVCE@IB(IC-VCBcurvewithBasedbiasedcurrent)ICVCE_VB(IC-VCBcurvewithBasedbiasedvoltage)IEBO(emitter-basecutoffcurrent,collectoropened)IECO(emitter-collectorcurrent,baseopened)IEVEB(IE-VEBcurve)VBCO(base-collectorvoltage,emitteropen)VCE(collector-emittervoltage)DynamicZ_I1I2(DynamicImpedance)Ifd_Vfd(Forwadcurrent@forwardbiasV)Ileakage_Vrd(Leakagecurrent@reversebiasV)Vbr_Ird(Reversebreakdownvoltage)Vfd_Ifd(Forwardvoltage@forwardbiasI)Vfd_Ifd_vsweep(ForwardI-Vsweep)Vrd_Ird(Reversevoltage@reversebiasI)Vrd_Ird_vsweep(ReverseI-Vsweep)