TheRDA6212isahigh-power,high-efficiencyqual-bandpoweramplifierModule.ThisdeviceisdesignedforGSM850,EGSM900,DCS,andPCShandhelddigitalcellularequipment.ThepoweramplifiersandtheircontrollerarefabricatedwithGaAsHeterojunctionBipolarTransistor(HBT)andCMOSrespectively.Thepackageofthisdeviceis6mm×6mm×1.4mm9-pinsLGA.Theinputandoutputarerealizedon-chipmatchedto50Ω.Thelow-passfilterforrampingsignalisintegratedinCMOScontroller.TheRDA6212requiresfewexternalcomponents,simplifyingPCBlayoutandreducingPCBboardspace.
Features
*Ultar-Small6mm×6mmPackage
*Qual-BandPowerAmplifier
*CompletePowerControlSolution
*Highefficiency
*Lowsupplyvoltage(3.2~4.2V)
*Input/Outputmatched@50Ω
*AdvancedHBT/CMOSprocess
封裝:RDA6212
批號(hào):中國(guó)
廠家:1088
型號(hào):QFN