Description

The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features

● VDS =30V,ID =50A

RDS(ON) 11mΩ @ VGS=10V

RDS(ON) 16mΩ @ VGS=5V

● High density cell design for ultra low Rdson

● Fully characterized Avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible Power Supply

100% UIS TESTED!

Schematic diagram

Marking and pin assignment

TO-252-2Ltop view

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE3050K

NCE3050K

TO-252-2L

-

-

-

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

50

A

Drain Current-Continuous(TC=100℃)

ID (100℃)

35

A

Pulsed Drain Current

IDM

140

A

Maximum Power Dissipation

PD

60

W

Derating factor

0.4

W/℃

Single pulse avalanche energy (Note 5)

EAS

70

mJ

Operating Junction andStorageTemperatureRange

TJ,TSTG

-55 To 175

℃

Thermal Resistance,Junction-to-Case(Note 2)

RθJC

2.5

℃/W