中紅外超級LED36系列波長3.60-3.70um開關(guān)時間30ns使用溫度-240度至50度TO-18封裝LightEmittingDiodeswithcentralwavelength3,65mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,65mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,65mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,65mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,65mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,65mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,65mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,65mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,65mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,65mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.